MOSFET N-CH 200V 21.3A TO3PML
Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 21.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 85mOhm @ 10.65A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 123 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 90W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PML |
Package / Case: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK758R3-40E,127Rochester Electronics |
MOSFET N-CH 40V 75A TO220AB |
|
2SK1460LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
AON7566Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 34A 8DFN |
|
APT40N60JCU3Roving Networks / Microchip Technology |
MOSFET N-CH 600V 40A SOT227 |
|
PMPB215ENEAXNexperia |
MOSFET N-CH 80V 1.9A DFN2020MD-6 |
|
IPD85P04P4L06ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 85A TO252-3 |
|
AOI1R4A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 3.8A TO251A |
|
IRF640NLPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 18A TO262 |
|
SI7463DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 11A PPAK SO-8 |
|
TPC8133,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 9A 8SOP |
|
IPD031N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
|
DMP2305U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23-3 |
|
SI3410DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A 6TSOP |