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IRF640NLPBF

IRF640NLPBF

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Part No :

IRF640NLPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 18A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11990 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
IRF640NLPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF640NLPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF640NLPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF640NLPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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