N-CHANNEL SILICON MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON7566Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 34A 8DFN |
|
APT40N60JCU3Roving Networks / Microchip Technology |
MOSFET N-CH 600V 40A SOT227 |
|
PMPB215ENEAXNexperia |
MOSFET N-CH 80V 1.9A DFN2020MD-6 |
|
IPD85P04P4L06ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 85A TO252-3 |
|
AOI1R4A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 3.8A TO251A |
|
IRF640NLPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 18A TO262 |
|
SI7463DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 11A PPAK SO-8 |
|
TPC8133,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 9A 8SOP |
|
IPD031N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
|
DMP2305U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23-3 |
|
SI3410DV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A 6TSOP |
|
RF4C100BCTCRROHM Semiconductor |
MOSFET P-CH 20V 10A HUML2020L8 |
|
AOT15S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 15A TO220 |