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HUF75852G3

HUF75852G3

POWER FIELD-EFFECT TRANSISTOR, 7

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HUF75852G3

HUF75852G3

Image is for reference, please contact us to get the real picture

Part No :

HUF75852G3

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14040 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 10 - Apr 14 2025
PDF
HUF75852G3 PDF
Type Description
Series:UltraFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:480 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.69 pF @ 25 V
FET Feature:-
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
HUF75852G3 is available at GangBo-ic.com, Please review product page below for detailed information, including HUF75852G3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HUF75852G3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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