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IPW60R024P7XKSA1

IPW60R024P7XKSA1

MOSFET N-CH 650V 101A TO247-3-41

MKP385415250JPP4T0

MKP385415250JPP4T0

CAP FILM 0.15UF 5% 2.5KVDC RAD

IPW60R024P7XKSA1

IPW60R024P7XKSA1

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Part No :

IPW60R024P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 101A TO247-3-41
Catalog
Transistors - FETs, MOSFETs - Single
Availability
297429 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:101A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 42.4A, 10V
Vgs(th) (Max) @ Id:4V @ 2.03mA
Gate Charge (Qg) (Max) @ Vgs:164 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7144 pF @ 400 V
FET Feature:-
Power Dissipation (Max):291W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
IPW60R024P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW60R024P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW60R024P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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