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IRFW630BTM-FP001

IRFW630BTM-FP001

MOSFET N-CH 200V 9A D2PAK

IRFW630BTM-FP001

IRFW630BTM-FP001

Image is for reference, please contact us to get the real picture

Part No :

IRFW630BTM-FP001

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 9A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
737373 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRFW630BTM-FP001 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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