MOSFET N-CH 1500V 2A TO3P-3L
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1500 V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 13Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 37.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 380 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 110W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P-3L |
Package / Case: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN601WK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
|
PMZB600UNELYLNexperia |
MOSFET N-CH 20V 600MA DFN1006B-3 |
|
FDB3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A D2PAK |
|
CPH6434-TL-ERochester Electronics |
MOSFET N-CH 30V 6A 6CPH |
|
RD3P100SNFRATLROHM Semiconductor |
MOSFET N-CH 100V 10A TO252 |
|
FDD5810Rochester Electronics |
MOSFET N-CH 60V 7.4A/37A DPAK |
|
PSMN059-150Y,115Nexperia |
MOSFET N-CH 150V 43A LFPAK56 |
|
SQ2308CES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TPN2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8TSON |
|
ISL9N302AP3Rochester Electronics |
MOSFET N-CH 30V 75A TO220-3 |
|
CSD23202W10Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
IXTA50N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO263 |
|
IPF13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO252-3 |