







MEMS OSC XO 54.0000MHZ H/LV-CMOS
MOSFET N-CH 100V 10A TO252
DEBUG FACTORY FOR MN101CF77GXN
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 133mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 20W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-252 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
FDD5810Rochester Electronics |
MOSFET N-CH 60V 7.4A/37A DPAK |
|
|
PSMN059-150Y,115Nexperia |
MOSFET N-CH 150V 43A LFPAK56 |
|
|
SQ2308CES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
|
TPN2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8TSON |
|
|
ISL9N302AP3Rochester Electronics |
MOSFET N-CH 30V 75A TO220-3 |
|
|
CSD23202W10Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
|
IXTA50N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO263 |
|
|
IPF13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO252-3 |
|
|
UPA2727UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 16A 8DFN |
|
|
IRL540NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
|
SI2333DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3 |
|
|
FQD20N06TFRochester Electronics |
MOSFET N-CH 60V 16.8A DPAK |
|
|
FDP032N08-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 75V 120A TO220 |