MOSFET N-CH 150V 43A LFPAK56
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 59mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 27.9 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1529 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 113W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQ2308CES-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TPN2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8TSON |
|
ISL9N302AP3Rochester Electronics |
MOSFET N-CH 30V 75A TO220-3 |
|
CSD23202W10Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
|
IXTA50N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 50A TO263 |
|
IPF13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO252-3 |
|
UPA2727UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 16A 8DFN |
|
IRL540NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
SI2333DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3 |
|
FQD20N06TFRochester Electronics |
MOSFET N-CH 60V 16.8A DPAK |
|
FDP032N08-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 75V 120A TO220 |
|
IRLL2705TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 3.8A SOT223 |
|
IRFR7546TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 56A DPAK |