MOSFET N-CH 60V 32A IPAK
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 28mOhm @ 16A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.7 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.5W (Ta), 93.75W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMFS5C670NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
RQ5E035XNTCLROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT3 |
|
DMPH4013SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 55A TO252 T&R |
|
NVTFS5C680NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.82A/20A 8WDFN |
|
ISP650P06NMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 3.7A SOT223-4 |
|
NTTFS010N10MCLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10.7A/50A 8WDFN |
|
CPH3331-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
TBB1012MMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
CPH6442-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 6A 6CPH |
|
IPP65R150CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO220-3 |
|
NTGS4141NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3.5A 6TSOP |
|
IPB039N10N3GE8187ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 160A TO263-7 |
|
IPP100N10S305AKSA1Rochester Electronics |
MOSFET N-CH 100V 100A TO220-3-1 |