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ISP650P06NMXTSA1

ISP650P06NMXTSA1

MOSFET P-CH 60V 3.7A SOT223-4

ISP650P06NMXTSA1

ISP650P06NMXTSA1

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Part No :

ISP650P06NMXTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 3.7A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11069 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 4.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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