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IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

MOSFET N-CH 100V 160A TO263-7

IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

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Part No :

IPB039N10N3GE8187ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 160A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
327232 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IPB039N10N3GE8187ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8410 pF @ 50 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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