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IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2

MOSFET N-CH 80V 300A 8HSOF

IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2

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Part No :

IAUT300N08S5N012ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 300A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
177217 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IAUT300N08S5N012ATMA2 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:231 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16250 pF @ 40 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IAUT300N08S5N012ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUT300N08S5N012ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUT300N08S5N012ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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