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NTMFS4C09NAT1G

NTMFS4C09NAT1G

MOSFET N-CH 30V 9A/52A 5DFN

NTMFS4C09NAT1G

NTMFS4C09NAT1G

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Part No :

NTMFS4C09NAT1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 9A/52A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
34500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTMFS4C09NAT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.9 nC @ 4.5 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1.252 pF @ 15 V
FET Feature:-
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NTMFS4C09NAT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMFS4C09NAT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMFS4C09NAT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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