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IPA50R650CEXKSA2

IPA50R650CEXKSA2

PFET, 6.1A I(D), 500V, 0.65OHM,

AON6360P

AON6360P

MOSFET N-CH 30V 36A/85A 8DFN

IPA50R650CEXKSA2

IPA50R650CEXKSA2

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Part No :

IPA50R650CEXKSA2

Manufacturer
Rochester Electronics
Description
PFET, 6.1A I(D), 500V, 0.65OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
46971 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPA50R650CEXKSA2 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:342 pF @ 100 V
FET Feature:-
Power Dissipation (Max):27.2W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA50R650CEXKSA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA50R650CEXKSA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA50R650CEXKSA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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