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FDC021N30

FDC021N30

MOSFET N-CH 30V 6.1A SUPERSOT6

FDC021N30

FDC021N30

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Part No :

FDC021N30

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 6.1A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
300081000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FDC021N30 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:26mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 15 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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