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TK42E12N1,S1X

TK42E12N1,S1X

MOSFET N CH 120V 88A TO-220

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SENSOR PROX INDUCTIVE 10MM CYL

TK42E12N1,S1X

TK42E12N1,S1X

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Part No :

TK42E12N1,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 120V 88A TO-220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
TK42E12N1,S1X PDF
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 60 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
TK42E12N1,S1X is available at GangBo-ic.com, Please review product page below for detailed information, including TK42E12N1,S1X price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK42E12N1,S1X to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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