







MEMS OSC XO 166.6660MHZ LVCMOS
AUTOMOTIVE HEXFET N CHANNEL
IC REG LINEAR 5V 500MA SOT89-5
LED XLAMP NEUTRAL WHT 4500K 2SMD
| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 75 V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 16mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 75 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2.19 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 110W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SCT3030AW7TLROHM Semiconductor |
TRANS SJT N-CH 650V 70A TO263-7 |
|
|
BSL202SNH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
|
NVMFS5826NLT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
|
VN2222LL-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |
|
|
BSS84PH6433XTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 170MA SOT23-3 |
|
|
IRF830ASPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |
|
|
BSS138NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
|
APT23F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
|
MTB60N10E7LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
BSC050N03MSGATMA1Rochester Electronics |
PFET, 16A I(D), 30V, 0.0063OHM, |
|
|
IRFR3303TRPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
|
CSD23381F4Texas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
|
SIHW30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AD |