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SQD25N06-22L_GE3

SQD25N06-22L_GE3

MOSFET N-CH 60V 25A TO252

RP357-150-2000-S

RP357-150-2000-S

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1944-16J

1944-16J

FIXED IND 1.8UH 720MA 540 MOHM

SQD25N06-22L_GE3

SQD25N06-22L_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQD25N06-22L_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 25A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12253 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SQD25N06-22L_GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1975 pF @ 25 V
FET Feature:-
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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