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BSC014N04LSIATMA1

BSC014N04LSIATMA1

MOSFET N-CH 40V 31A/100A TDSON

4307-54

4307-54

RF ATTENUATOR 15.5DB 75OHM 20QFN

BSC014N04LSIATMA1

BSC014N04LSIATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC014N04LSIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 31A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
61576 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
BSC014N04LSIATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
BSC014N04LSIATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC014N04LSIATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC014N04LSIATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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