MOSFET N-CH 80V 200A DDPAK
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 76 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7920 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DDPAK/TO-263-3 |
Package / Case: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI4425DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 19.7A 8SO |
|
STD80N10F7STMicroelectronics |
MOSFET N-CH 100V 70A DPAK |
|
SI7119DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 3.8A PPAK1212-8 |
|
BSZ050N03LSGRochester Electronics |
BSZ050N03 - 12V-300V N-CHANNEL P |
|
FDBL0330N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 220A 8HPSOF |
|
STL9N60M2STMicroelectronics |
MOSFET N-CH 600V 4.8A PWRFLAT56 |
|
VN10LFTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 150MA SOT23-3 |
|
IRFH3707TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 12A/29A 8PQFN |
|
BSO119N03SRochester Electronics |
MOSFET N-CH 30V 9A 8DSO |
|
QS5U26TRROHM Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
|
AON7466Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A/30A 8DFN |
|
HUF75309D3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQM30010EL_GE3Vishay / Siliconix |
MOSFET N-CH 30V 120A TO263 |