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IRFH3707TRPBF

IRFH3707TRPBF

MOSFET N-CH 30V 12A/29A 8PQFN

IRFH3707TRPBF

IRFH3707TRPBF

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Part No :

IRFH3707TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 12A/29A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11001 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
IRFH3707TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:755 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3x3)
Package / Case:8-PowerVDFN
IRFH3707TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH3707TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH3707TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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