RES ARRAY 4 RES 330K OHM 1206
CAP CER 1812 2.2NF 100V ULTRA ST
MOSFET N-CH 600V 18A I2PAK
Type | Description |
---|---|
Series: | MDmesh™ II Plus |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK (TO-262) |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ZXMN6A07FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.2A SOT23-3 |
|
BUK9M8R5-40HXNexperia |
MOSFET N-CH 40V 40A LFPAK33 |
|
FQP9N08LRochester Electronics |
MOSFET N-CH 80V 9.3A TO220-3 |
|
BSS123-F2-0000HF |
N-CH MOSFET 100V 0.2A SOT-23-3L |
|
STP38N65M5STMicroelectronics |
MOSFET N-CH 650V 30A TO220 |
|
SPI12N50C3XKSA1Rochester Electronics |
MOSFET N-CH 560V 11.6A TO262-3 |
|
BUK7E11-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A I2PAK |
|
ZXMN2F34FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.4A SOT23-3 |
|
SVD14N03RT4GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
BSC014N04LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 31A/100A TDSON |
|
IRFZ44ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
IXTA20N65X-TRLWickmann / Littelfuse |
MOSFET N-CH 650V 20A TO263 |
|
CSD19505KTTTTexas Instruments |
MOSFET N-CH 80V 200A DDPAK |