MOSFET N-CH 300V 19A D2PAK
DC DC CONVERTER 5V 50W
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 185mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 57 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.34 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 210W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK110A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 24A TO220SIS |
|
BSP125L6327HTSA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IPD088N04LGBTMA1Rochester Electronics |
MOSFET N-CH 40V 50A TO252-3 |
|
PMZ1000UN,315Nexperia |
MOSFET N-CH 30V 480MA DFN1006-3 |
|
STS11N3LLH5STMicroelectronics |
MOSFET N-CH 30V 11A 8SO |
|
SIRA80DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
FDD3682Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.5/32A TO252AA |
|
NTD4855N-1GRochester Electronics |
MOSFET N-CH 25V 14A/98A IPAK |
|
PMV100XPEARNexperia |
MOSFET P-CH 20V 2.4A TO236AB |
|
IRFR010PBFVishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
|
DMP2066LDMQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.6A SOT-26 |
|
AOT8N80LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 800V 7.4A TO220 |
|
FDFS6N303Rochester Electronics |
MOSFET N-CH 30V 6A 8SOIC |