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BSP125L6327HTSA1

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BSP125L6327HTSA1

BSP125L6327HTSA1

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Part No :

BSP125L6327HTSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 120MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
358800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 24 - Mar 28 2025
PDF
BSP125L6327HTSA1 PDF
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
BSP125L6327HTSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSP125L6327HTSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSP125L6327HTSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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