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FDFS6N303

FDFS6N303

MOSFET N-CH 30V 6A 8SOIC

FDFS6N303

FDFS6N303

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Part No :

FDFS6N303

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 6A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
86655 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
FDFS6N303 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
FDFS6N303 is available at GangBo-ic.com, Please review product page below for detailed information, including FDFS6N303 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFS6N303 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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