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IRFR4104PBF

IRFR4104PBF

HEXFET N-CHANNEL POWER MOSFET

IRFR4104PBF

IRFR4104PBF

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Part No :

IRFR4104PBF

Manufacturer
Rochester Electronics
Description
HEXFET N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
636163 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFR4104PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.95 pF @ 25 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR4104PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFR4104PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFR4104PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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