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SI1427EDH-T1-GE3

SI1427EDH-T1-GE3

MOSFET P-CH 20V 2A SC70-6

SI1427EDH-T1-GE3

SI1427EDH-T1-GE3

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Part No :

SI1427EDH-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 2A SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17269 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
SI1427EDH-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.56W (Ta), 2.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-6 (SOT-363)
Package / Case:6-TSSOP, SC-88, SOT-363
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