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SI7726DN-T1-GE3

SI7726DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI7726DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 35A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
676167 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SI7726DN-T1-GE3 PDF
Type Description
Series:SkyFET®, TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1765 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 52W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
SI7726DN-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI7726DN-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI7726DN-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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