RES 0.47 OHM 5% 1/2W 1210
MOSFET P-CH 20V 1.6A 3PICOSTAR
TERMINAL AND HSG FOR S8VM SERIES
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 205mOhm @ 500mA, 8V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.959 nC @ 4.5 V |
Vgs (Max): | -12V |
Input Capacitance (Ciss) (Max) @ Vds: | 198 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-PICOSTAR |
Package / Case: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RRF015P03TLROHM Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3 |
|
STF33N60DM2STMicroelectronics |
MOSFET N-CH 650V 24A TO220FP |
|
TSM2312CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 4.9A SOT23 |
|
TSM150P03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 36A 8PDFN |
|
IRFR2407PBFRochester Electronics |
MOSFET N-CH 75V 42A DPAK |
|
SFT1350-HRochester Electronics |
MOSFET P-CH 40V 19A TP |
|
IXFN90N170SKWickmann / Littelfuse |
SICFET N-CH 1700V 90A SOT227B |
|
FQP2N40-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO220-3 |
|
SIR680DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 100A PPAK SO-8 |
|
5HN01SS-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SSFP3 |
|
RM1A4N150S6Rectron USA |
MOSFET N-CH 150V 1.4A SOT23-6 |
|
MSC70SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 89A SOT227 |
|
FDB6670ASRochester Electronics |
MOSFET N-CH 30V 62A TO263AB |