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RM1A4N150S6

RM1A4N150S6

MOSFET N-CH 150V 1.4A SOT23-6

AH18164

AH18164

HEARTLAND 18 X 16 X 4 INCHES AH1

RM1A4N150S6

RM1A4N150S6

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Part No :

RM1A4N150S6

Manufacturer
Rectron USA
Description
MOSFET N-CH 150V 1.4A SOT23-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
306130 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:480mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.56W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-6
Package / Case:SOT-23-6
RM1A4N150S6 is available at GangBo-ic.com, Please review product page below for detailed information, including RM1A4N150S6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM1A4N150S6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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