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FQP2N40-F080

FQP2N40-F080

MOSFET N-CH 400V 1.8A TO220-3

40-CBSA-1.25X1.5X0.4

40-CBSA-1.25X1.5X0.4

RF SHIELD 1.25" X 1.5" SMD

FQP2N40-F080

FQP2N40-F080

Image is for reference, please contact us to get the real picture

Part No :

FQP2N40-F080

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 400V 1.8A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
276127 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQP2N40-F080 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.8Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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