MOSFET N-CH 30V 160A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.4mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6.32 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 231W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD4815N-35GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
NTMS4920NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.6A 8SOIC |
|
IPB160N04S4LH1ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
IRFZ44RPBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
ZXMP10A18KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 3.8A TO252-3 |
|
IRLU3103PBFRochester Electronics |
MOSFET N-CH 30V 55A IPAK |
|
AUIRF3805S-7PRochester Electronics |
AUTOMOTIVE N CHANNEL |
|
R6015ANXROHM Semiconductor |
MOSFET N-CH 600V 15A TO220FM |
|
STS10P4LLF6STMicroelectronics |
MOSFET P-CH 40V 10A 8SO |
|
NTD25P03LT4Rochester Electronics |
MOSFET P-CH 30V 25A DPAK |
|
FDP80N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
|
HUFA75842P3Rochester Electronics |
MOSFET N-CH 150V 43A TO220-3 |
|
IPAW60R380CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 15A TO220 |