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FQPF18N20V2YDTU

FQPF18N20V2YDTU

MOSFET N-CH 200V 18A TO220F-3

S-73CS

S-73CS

COMP O= .859,L= 1.63,W= .054

1051032:0088

1051032:0088

TERM BLOCK MARKER

FFMD-25-T-02.20-01-L-N-R

FFMD-25-T-02.20-01-L-N-R

.050 CABLE PLUG

FQPF18N20V2YDTU

FQPF18N20V2YDTU

Image is for reference, please contact us to get the real picture

Part No :

FQPF18N20V2YDTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 18A TO220F-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
101600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQPF18N20V2YDTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.08 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3 (Y-Forming)
Package / Case:TO-220-3 Full Pack, Formed Leads
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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