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IPB160N04S4LH1ATMA1

IPB160N04S4LH1ATMA1

MOSFET N-CH 40V 160A TO263-7

T38362-20-0

T38362-20-0

CONN BARRIER STRP 20CIRC 0.375"

IPB160N04S4LH1ATMA1

IPB160N04S4LH1ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB160N04S4LH1ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 160A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
846084 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPB160N04S4LH1ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:14950 pF @ 25 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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