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DMN30H4D0LFDE-7

DMN30H4D0LFDE-7

MOSFET N-CH 300V 550MA 6UDFN

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DMN30H4D0LFDE-7

DMN30H4D0LFDE-7

Image is for reference, please contact us to get the real picture

Part No :

DMN30H4D0LFDE-7

Manufacturer
Zetex Semiconductors (Diodes Inc.)
Description
MOSFET N-CH 300V 550MA 6UDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19134 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
DMN30H4D0LFDE-7 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
Rds On (Max) @ Id, Vgs:4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:187.3 pF @ 25 V
FET Feature:-
Power Dissipation (Max):630mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type E)
Package / Case:6-PowerUDFN
DMN30H4D0LFDE-7 is available at GangBo-ic.com, Please review product page below for detailed information, including DMN30H4D0LFDE-7 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DMN30H4D0LFDE-7 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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