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IPA057N06N3GXKSA1

IPA057N06N3GXKSA1

MOSFET N-CH 60V 60A TO220-3-31

IPA057N06N3GXKSA1

IPA057N06N3GXKSA1

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Part No :

IPA057N06N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 60A TO220-3-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10240 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPA057N06N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-31 Full Pack
Package / Case:TO-220-3 Full Pack
IPA057N06N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA057N06N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA057N06N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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