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IPC50N04S55R8ATMA1

IPC50N04S55R8ATMA1

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Part No :

IPC50N04S55R8ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 50A 8TDSON-33
Catalog
Transistors - FETs, MOSFETs - Single
Availability
646064 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPC50N04S55R8ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 25 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-33
Package / Case:8-PowerTDFN
IPC50N04S55R8ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPC50N04S55R8ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPC50N04S55R8ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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