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NVTR01P02LT1G

NVTR01P02LT1G

SINGLE P-CHANNEL POWER MOSFET -2

NVTR01P02LT1G

NVTR01P02LT1G

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Part No :

NVTR01P02LT1G

Manufacturer
Rochester Electronics
Description
SINGLE P-CHANNEL POWER MOSFET -2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19999 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
NVTR01P02LT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:-
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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