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IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1

MOSFET N-CH 950V 4A SOT223

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IPN95R2K0P7ATMA1

IPN95R2K0P7ATMA1

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Part No :

IPN95R2K0P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 950V 4A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10936 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPN95R2K0P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 400 V
FET Feature:-
Power Dissipation (Max):7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
IPN95R2K0P7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN95R2K0P7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN95R2K0P7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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