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IPN60R2K1CEATMA1

IPN60R2K1CEATMA1

MOSFET N-CH 600V 3.7A SOT223

IPN60R2K1CEATMA1

IPN60R2K1CEATMA1

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Part No :

IPN60R2K1CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 3.7A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10864 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPN60R2K1CEATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:SOT-223-3
IPN60R2K1CEATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN60R2K1CEATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN60R2K1CEATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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