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SPD08P06PGBTMA1

SPD08P06PGBTMA1

MOSFET P-CH 60V 8.83A TO252-3

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SPD08P06PGBTMA1

SPD08P06PGBTMA1

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Part No :

SPD08P06PGBTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 8.83A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15719 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SPD08P06PGBTMA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6.2V
Rds On (Max) @ Id, Vgs:300mOhm @ 10A, 6.2V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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