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SI6423DQ-T1-GE3

SI6423DQ-T1-GE3

MOSFET P-CH 12V 8.2A 8TSSOP

RJ 43

RJ 43

DIODE SCHOTTKY 30V 3A AXIAL

SI6423DQ-T1-GE3

SI6423DQ-T1-GE3

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Part No :

SI6423DQ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 8.2A 8TSSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10738 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SI6423DQ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.05W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
SI6423DQ-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI6423DQ-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI6423DQ-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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