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SIHJ690N60E-T1-GE3

SIHJ690N60E-T1-GE3

MOSFET N-CH 600V 5.6A PPAK SO-8

SIHJ690N60E-T1-GE3

SIHJ690N60E-T1-GE3

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Part No :

SIHJ690N60E-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 5.6A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13015 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:E
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:347 pF @ 100 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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