MOSFET N-CH 600V 26A TO247
Type | Description |
---|---|
Series: | MDmesh™ II Plus |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 125mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45.5 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1781 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 190W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NVD5C478NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/45A DPAK |
![]() |
STP52P3LLH6STMicroelectronics |
MOSFET N-CHANNEL 30V 52A TO220 |
![]() |
STF8N65M5STMicroelectronics |
MOSFET N-CH 650V 7A TO220FP |
![]() |
BSC500N20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 24A TDSON-8 |
![]() |
PMV130ENEA/DG/B2215Rochester Electronics |
PMV130ENEA SMALL SIGNAL FET |
![]() |
TSM080N03PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 73A 8PDFN |
![]() |
SSM6J212FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A ES6 |
![]() |
PMF780SN,115Rochester Electronics |
MOSFET N-CH 60V 570MA SOT323-3 |
![]() |
SIHP6N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5A TO220AB |
![]() |
PSMN1R8-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
![]() |
STFI34N65M5STMicroelectronics |
MOSFET N CH 650V 28A I2PAKFP |
![]() |
SI2300DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 3.6A SOT23-3 |
![]() |
SQJA46EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |