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SSM6J212FE,LF

SSM6J212FE,LF

MOSFET P-CH 20V 4A ES6

SSM6J212FE,LF

SSM6J212FE,LF

Image is for reference, please contact us to get the real picture

Part No :

SSM6J212FE,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 20V 4A ES6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
805980 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SSM6J212FE,LF PDF
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:40.7mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:970 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ES6
Package / Case:SOT-563, SOT-666
SSM6J212FE,LF is available at GangBo-ic.com, Please review product page below for detailed information, including SSM6J212FE,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SSM6J212FE,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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