MOSFET N-CH 200V 24A TDSON-8
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1580 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 96W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8-1 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMV130ENEA/DG/B2215Rochester Electronics |
PMV130ENEA SMALL SIGNAL FET |
|
TSM080N03PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 73A 8PDFN |
|
SSM6J212FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4A ES6 |
|
PMF780SN,115Rochester Electronics |
MOSFET N-CH 60V 570MA SOT323-3 |
|
SIHP6N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5A TO220AB |
|
PSMN1R8-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
STFI34N65M5STMicroelectronics |
MOSFET N CH 650V 28A I2PAKFP |
|
SI2300DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 3.6A SOT23-3 |
|
SQJA46EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STFI5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A I2PAKFP |
|
DMP2039UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 6.7A 6UDFN |
|
SIHB16N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 16A D2PAK |
|
SIHFPS40N50L-GE3Vishay / Siliconix |
POWER MOSFET SUPER-247, 100 M @ |