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FQP9N90C

FQP9N90C

POWER FIELD-EFFECT TRANSISTOR, 8

21-14-M5.0

21-14-M5.0

PL75 / PL75, M17/176-00002 CABLE

FQP9N90C

FQP9N90C

Image is for reference, please contact us to get the real picture

Part No :

FQP9N90C

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12470 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQP9N90C PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.73 pF @ 25 V
FET Feature:-
Power Dissipation (Max):205W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP9N90C is available at GangBo-ic.com, Please review product page below for detailed information, including FQP9N90C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP9N90C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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