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APT34N80B2C3G

APT34N80B2C3G

MOSFET N-CH 800V 34A T-MAX

APT34N80B2C3G

APT34N80B2C3G

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Part No :

APT34N80B2C3G

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET N-CH 800V 34A T-MAX
Catalog
Transistors - FETs, MOSFETs - Single
Availability
635863 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
APT34N80B2C3G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:355 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™ [B2]
Package / Case:TO-247-3 Variant
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