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IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1

MOSFET N-CH 100V 35A TO252-31

IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1

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Part No :

IPD35N10S3L26ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 35A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
675867 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPD35N10S3L26ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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